Search


   
      


Search Tags




Faculty Pages

Click HERE for Instructions to edit the profile.

Click HERE to Edit the Profile

Samit Kumar Ray

Details

Professor


Physics & Meteorology

Indian Institute of Technology Kharagpur,India,721302

+91 - 3222 - 283838


Biodata

Field of Specialisation:

  • Nanotechnology
  • Condensed Matter Physics
  • Semiconductor Physics & Devices
  • Optoelectronics


  • CURRENT ONGOING PROJECTS

    • Project Title : Development & characterization of nanostructured thin films for SiGe quantum well infrared photodetector and ferroelectric based gas/chemical sensors
      Principal Investigator : Prof. S. K. Ray
      Co-Principal-Investigators : Prof. I. Manna, Prof. A. Dhar
      Sponsor : DRDO
    • Project Title : Terahertz emission of Si/SiGe structures doped with shallow acceptors
      Principal Investigator : Prof. S. K. Ray
      Co-Principal-Investigators : Dr. P. Roychowdhury
      Sponsor : DST - RFBR (Moscow)
    • Project Title : Synthesis and characterization of nanostructured materials for functional and structural applications
      Principal Investigator : Prof. I. Manna
      Co-Principal-Investigators : Prof. S. K. Ray, Prof. R. Mitra
      Sponsor : DST
    • Project Title : Fabrication and characterization of Novel Photonic Crystal Structures and Si/Ge Quantum Dots for Photonic Applications
      Principal Investigator : Prof. S. K. Ray
      Co-Principal-Investigators : Prof. L. Pavsei, University of Trento, Italy
      Sponsor : DST-ITPAR (Italy)
    • Project Name : Thin Film Characterization
      Client : Various agencies
      Consultant : Prof. S. K. Ray
      Co-consultant(s) : Dr. A. Dhar


    Technologies Developed

    List of Technologies

    • Terahertz frequency radiation sources and detectors based on group-IV materials and method of manufacture : Granted (Ref : US Patent No. : US 7,386, 016 B2 dated 10th June, 2008 )



    List of Publications

    Books/Monographs


    Journal Paper

     

    Publications: 2008 - 2009

    • Magnetic semiconducting diode of p-Ge1-xMnx/n-Ge layers on silicon substrate by S. Majumdar, A. K. Das and S. K. Ray Applied Physics Letters, 94, 122505 (2009)
    • Evolution of strain and composition of Ge Islands on Si (001) Grown by Molecular Beam Epitaxy during Post-Growth Annealing by R.K.Singha, S.Das, S.Majumdar, K.Das, A.Dhar and S.K.Ray Journal of Applied Physics, 101, 114301 (2008)
    • Bonding configuration in partially relaxed pseudomorphic epilayer of SiGe: an evidence of BC-8 phase of silicon by M Pandey, S K Ray and P Selvam Journal of Physics.: Condens. Matter, 20 Issue: 335234 (2008)
    • Schottky Barrier Characteristics of Cobalt-Nickel Silicide/n-Si Junctions for Scaled-Si CMOS Applications by Debashis Panda, Achintya Dhar and Samit Kr. Ray IEEE Transaction on Electron Devices, 55, p. 2403 (2008)
    • Shape and size distribution of MBE grown self-assembled Ge islands on Si (001) substrates by R. K. Singha, S. Das, K. Das, S. Majumdar, A. Dhar and S. K. Ray J. Nanoscience & Nanotechnology, 8, p. 4101 (2008)
    • Synthesis of CdS nanowires using nanoporous alumina template by S. K. Ray and S. P. Mondal International Journal of Nanomanufacturing, Vol. 2, p.5 83 (2008)
    • Synthesis and temperature dependent photoluminescence properties of Mn doped Ge nanowires by S. Majumdar, A. K. Das & S. K. Ray Journal of Applied Physics, 105, 024302 (2009)
    • Phase Inhomogeneity and Electrical Characteristics of Nickel Silicide Schottky Contacts Formed on 4H-SiC by I. Nikitina, K. Vassilevski, A. Horsfall, N. Wright, A. G. O’Neill, S. K. Ray and C. M. Johnson Materials Science Forum, 2, p. 615 (2009)
    • Temperature dependent leakage current behavior of pulsed laser ablated SrBi2Ta2O9 thin films by A. Roy, S. Maity, A. Dhar, D. Bhattacharya and S. K. Ray Journal of Applied Physics, 105, 044103 (2009)
    • Temperature- and Time-Dependent Shape Transformation of ZnO Nanostructures Grown by Vapor–Solid Method by S. Mandal, S. K. Lahiri, A. Dhar, and S. K. Ray J. Nanoscience & Technology Letters, 1, p. 57 (2009)
    • Growth and Photoluminescence Characteristics of ZnO Tripods by S. Mandal, A. Dhar and S. K. Ray Journal of Applied Physics, 105, 033513 (2009)
    • Carrier transport mechanism in aluminum nanoparticle embedded AlQ3 structures for organic based memory devices by V.S.Reddy, S. Karak, S. K. Ray and A.Dhar Organic Electronics, 10, p.138 (2009)
    • Silicon Dioxide Embedded Germanium Nanocrystals Grown Using Molecular Beam Epitaxy for Floating Gate Memory Devices by S. Das, R. K. Singha, K. Das, A. Dhar, and S. K. Ray Journal of Nanoscience and Nanotechnology, 9, p. 1 (2009)
    • Ultraviolet and Blue Photoluminescence from Sputter Deposited Ge Nanocrystals Embedded in SiO2 Matrix by P, K. Giri, K. Das, S. K. Ray Journal of Applied Physics, 103, p. 103534 (2008)
    • Temperature dependent photoluminescence characteristics of nanocrystalline ZnO films grown by sol–gel technique by S. Mandal, M.L.N. Goswami, K. Das, A. Dhar and S.K. Ray Thin Solid Films, 516, p. 8702-8706 (2008)
    • Self-assembled growth of hexagonal ZnO nanoprisms exhibiting good photoluminescence property by S. Mandal, H.Mullick, A. Dhar, S.K. Ray Journal of the Electrochmical Society, 155, p. K129 (2008)
    • Memory Characteristics of Nickel Nanocrystals with High-k Dielectric Tunneling Barriers by D. Panda, S. Maikap, A. Dhar and S. K. Ray Electrochemical and Solid State Letters, Volume: 12 Issue: (2009)
    • Stress, texture and microstructure of zirconium thin films probed by X-ray diffraction by J. Chakraborty, Kishore Kumar, S. Mukherjee, S. K. Ray Thin Solid Films, 516, p. 8479 (2008)
    • Temperature dependent leakage current behavior of pulsed laser ablated SrBi2Ta2O9 thin films by A. Roy, S. Maity, A. Dhar, D. Bhattacharya and S. K. Ray Journal of Applied Physics, 105, 044103 (2009)

     

    Publications: 2007 - 2008

    • Memory effect in junction-like CdS nanocomposites/ conducting polymer poly [2-ethoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene] heterostructure by S.P. Mondal, V. S. Reddy, S. Das, A. Dhar and S. K. Ray, Nanotechnology, 19, p.215306 (2008)
    • Structural and electrical properties of metal–ferroelectric–insulator–semiconductor structure of Al/SrBi2Ta2O9/HfO2/Si using HfO2 buffer by A Roy, A Dhar, D Bhattacharya and S K Ray, J. Phys. D: Appl. Phys., 41, p.095408 (2008)
    • Optical properties of CdS nanowires prepared by dc electrochemical deposition in porous alumina template by S.P. Mondal, A. Dhar, S.K. Ray, Materials Science in Semiconductor Processing, 10, pp. 185-193 (2007)
    • Improved Charge Storage Characteristics of Ge Nanocrystals Embedded In Hafnium Oxide by S. Das, K. Das, R. K. Singha, A. Dhar, and S. K. Ray, Appl. Phys. Letts., 91, p.233118 (2007)
    • Formation of Y- and T-junction Ge nanowires by vapor-liquid-solid mechanism by K. Das, A. K. Chakraborty, M.L. NandaGoswami, R. K. Shingha, A. Dhar, K. S. Coleman and S. K. Ray, Int. Journal of Nanoscience, 6, pp. 467-471 (2007)
    • Optical and dielectric properties of junction-like CdS nano-composites embedded in polymer matrix by S. P. Mondal, H. Mullick, T. Lavanya, A. Dhar, S.K.Lahiri and S. K. Ray, Journal of Applied Physics, 102, p.064305 (2007)
    • Effect of annealing temperature on the structural and electrical properties of SrBi2Ta2O9 thin films for memory-based applications by G. Jha, A. Roy, A. Dhar, I. Manna, S.K. Ray, Physica B, 400, pp. 33-37 (2007)
    • Cyclic deep reactive ion etching with mask replenishment by T N Adam, S Kim, P Lv, G Xuan, S K Ray, R T Troeger, D Prather and J Kolodzey, J. Micromech. Microeng., 17, pp. 1773-1780 (2007)
    • A Comparative Study of the Vibrational and Luminescence Properties of Embedded Ge Nanocrystals Prepared by Ion Implantation and Sputter Deposition Methods: Role of strain & defects by P K Giri, S Bhattacharyya, Kaustuv Das, S K Ray, R Kesavamoorthy, B K Panigrahi and K G M Nair, Semicond. Sci. Technol., 22, pp. 1332 -133 (2007)
    • Studies on conduction mechanisms of pentacene based diodes using impedance spectroscopy by V S Reddy, S Das, S K Ray and A Dhar, J. Phys. D: Appl. Phys., 40, pp. 7687 -7693 (2007)
    • Characteristics of Ge nanocrystals grown by RF magnetron sputtering by R. K. Singha, K. Das, S. Das, A. Dhar and S. K. Ray, Advanced Materials Research, 31, pp. 89-91 (2008)
    • Optical and structural characteristics of ZnO thin films grown by rf magnetron sputtering” - 2008 by S. Mandal, R.K. Singha, A. Dhar, S.K. Ray, Mat. Res. Bull., 43, pp. 244–250 (2008)
    • Characteristics of DC magnetron sputtered ternary cobalt–nickel silicide thin films for ultra shallow junction devices by D. Panda, A. Dhar, S.K. Ray, Microelectronic Engineering, 85, pp.559–565 (2008)
    • Effect of Al concentration in grain and grain boundary region of ZnO films: a dielectric approach by S Mandal, H Mullick, S Majumdar, A Dhar and S K Ray, J. Phys. D: Appl. Phys., 41, p.025307 (2008)
    • Temperature-dependent texture, stress and resistivity in melt spun Cu0.95Co0.05 ribbon by S. Majumdar, R.K. Singha, K. Das, M. Chakraborty, A.K. Das and S.K. Ray, Physica B, 403 pp.2059-2064 (2008)
    • Effect of deposition temperature on the microstructure and electrical properties of Ba0.8Sr0.2TiO3 thin films deposited by radio-frequency magnetron sputtering by G. C. Jha, S. K. Ray, I. Manna, Thin Solid Films, 526, pp. 3416-3421 (2008)
    • Optical and dielectric properties of junction-like CdS nano-composites embedded in polymer matrix by S. P. Mondal, H. Mullick, T. Lavanya, A. Dhar, S.K.Lahiri and S. K. Ray, Virtual Journal of Nanoscale Science & Technology –, vol. 16, issue 15 (2007)


    Publications: 2006 - 2007
    • Temperature dependent shape transformation of Ge nanostructures by vapor-liquid-solid method by K. Das, A. K. Chakraborty, M.L. NandaGoswami, R. K. Shingha, A. Dhar, K. S. Coleman and S. K. Ray,, J. Appl. Phys, 101, 074307 (2007)
    • Growth of Ge islands and nanocrystals using RF magnetron sputtering and their characterization by K. Das, M.L.N. Goswami, A. Dhar, B.K. Mathur, and S.K.Ray, Nanotechnology, vol. 18, p. 175301 (2007)
    • Optical characteristics of Er3+- doped Ge nanocrystals in sol-gel derived SiO2 glass” (2007) by K. Das, V. Nagarajan, M.L. NandaGoswami, D. Panda, A. Dhar, and S. K. Ray, Nanotechnology, vol.18, p.095704 (2007)
    • Characteristics of CdS nanowires grown in porous alumina template using two-cell method by S. P. Mondal, K. Das, A. Dhar and S. K. Ray, Nanotechnology, Vol 18, p.095606 (2007)
    • Synthesis of LECBD grown cluster assembled SeO2 thin films by S. Rath, K. Das, S.N. Sarangi, A.K. Dash, S.K. Ray and S.N. Sahu, Appl. Surface Science, vol253, p. 2138 (2006)
    • Realization of biferroic properties in La0.6Sr0.4MnO3 /0.7Pb(g(1/3Nb2/3)O3 – 0.3(PbTiO3) epitaxial superlattices by Ayan Roy Chaudhuri, R. Ranjith, S. B. Krupanidhib, R. V. K. Mangalam and A. Sundaresan S. Majumdar and S. K. Ray, Journal of Applied Physics, p.114104 (2007)
    • Temperature dependent shape transformation of Ge nanostructures by vapor-liquid-solid method by K. Das, A. K. Chakraborty, M.L. NandaGoswami, R. K. Shingha, A. Dhar,K. S. Coleman and S. K. Ray, Virtual J. Nanoscale Science & Technology, , April 30, 2007, vol.15, Issue 17 (2007)
    • Thickness and temperature dependent electrical characteristics of nano-crystalline BaxSr1-xTiO3 thin films by B Panda, A. Roy, A. Dhar and S. K. Ray, Journal of Applied Physics, 101, p.064116 (2007)
    • High-k Gate Oxide for Silicon Heterostructure MOSFET Devices – An Invited Review Paper for Special issue on Oxides in Electronics by S. K. Ray, R. Mahapatra and S. Maikap, J. Materials Science : Materials on Electronics, vol.l7, p.689 (2006)
    • The effect of substrate temperature on theproperties of ITO thin films for OLED applications by V Sivaji Reddy, K Das, A Dhar and S K Ray, Semicond. Sci. Technol., vol.21, p.1747 (2006)
    • Electrical properties of ultrathin HfO2 on partially strain-compensated SiGeC/Si heterostructures by R. Mahapatra, S. Maikap, Je-Hun Lee and S. K. Ray, J. Electroceramics, vol.16, p. 545 (2006)
    • Characteristics of ZrO2 gate dielectrics on O2- and N2O-plasma treated partially strain-compensated Si0.69Ge0.3C0.01 layers by R. Mahapatra, S. Maikap, Je-Hun Lee and S. K. Ray, Journal of Applied Physics, vol.100, p. 34105 (2006)


    Publications: 2005 - 2006
    • Capacitance study of selectively doped SiGe/Si heterostructures by I V. Antonova, V I Obodinkov, M. S. Kagan R. T. Troeger, S. K. Ray, J. Kolodzey, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 20, pp. 335-339 (2005)
    • Characteristics of Thermally Oxidized-Ti as a High-k Gate Dielectric on SiC Metal-Oxide-Semiconductor Devices by R. Mahapatra, N. Poolamai, N. Wright, A. K. Chakraborty, K. S. Coleman, K. Das, S. K Ray, P. Coleman, and P. Burrows, Electro Chemical Society Transactions, 1, p. 33 (2006)
    • Characteristics of high-k ZrO2 gate dielectrics on O-2/N2O plasma treated Si0.69Ge0.3C0.01/Si heterolayers by R. Mahapatra, S. Maikap, A. Dhar, S. Maikap and S. K. Ray, Ferrroelectrics, 329, 1005 (2005)
    • Silicon-germanium nanostructures (Invited Paper in the Special Issue on Nanotechnology) by S. K. Ray and K. Das, Transactions of the Indian Institute of Metals, vol. 58, p. 1203 (2005)
    • Correlation between microstructure and electronic behaviour in rapidly quenched Fe-substituted granular Cu–Co alloys by R. Singha, A. Dhar, D. Bhattacharya, M. Chakraborty, V. Srinivas, S.K. Ray, Thin Solid Films, v. 505, p. 157 (2006)


    Publications: 2004 - 2005
    • Luminescence characteristics of Ge nanocrystals embedded in SiO2 matrix by S.K. Ray, K. Das, Optical Materials, 27 (2005) 948-952
    • Terahertz emission from electrically pumped gallium doped silicon devices by P.-C. Lv, R. T. Troeger, S. Kim, S. K. Ray, K. W. Goossen, J. Kolodzey, I. N. Yassievich and M. S., Applied Physics Letters, 85 (2004) 366
    • Terahertz emitters and detectors based on SiGe nanostructures by J Kolodzey, TN Adam, RT Troeger, PC Lv, SK Ray, IN Yassievich, MA Odnoblyudov, MS Kagan, International Journal of Nanoscience, 3 (2004) 171
    • Ultrathin oxynitride films grown on Si0.74Ge0.26/Si heterolayers using low energy plasma source nitrogen implantation by R. Mahapatra, S. Maikap, G. S. Kar and S. K. Ray, Solid State Electronics, 49 (2005) 449
    • Effects of interfacial NH3/N2O-plasma treatment on the structural and electrical properties of ultrathin HfO2 gate dielectrics on p-Si substrates by S. Maikap, J.-H. Lee, R. Mahapatra, S. Pal, Y. S. No, W.-K. Choi, S. K. Ray, and D.-Y. Kim, Solid State Electron.,, 49 (2005) 524
    • Ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructure by S. K. Ray, R. Mahapatra, S. Maikap, A. Dhar, D. Bhattacharya and Je-Hun Lee, Materials Science in Semiconductor Processing, 7 (2004) 203 -208
    • Novel gate dielectrics for nanoscale semiconductor devices by Bose DN, Pal S, Ray SK, B.R. Chakraborty, Indian Journal of Physics and Proceedings of the Indian association for the cultivation of science, 78a (2004) 38


    Some Earlier Publications
    • Microwave plasma oxidation of gallium nitride by Pal.S, Mahapatra.R, Ray.S.K, Chakraborty.B.R, Shivaprasad.S.M, Lahiri.S.K, Bose.D.N, Thin Solid Films, 425 (2003) 20
    • Electrical and interfacial characteristics of ultra thin ZrO2 gate dielectrics on strain compensated SiGeC/Si heterostructure by Mahapatra.R, Lee.Je.Hun, Maikap.S, Kar.G.S, Dhar.A, Nong-M. Hwang, Doh-Y. Kim, Mathur.B.K and Ray.S., Appl. Phys.Lett, 62 (2003) 2320-2322
    • Effects of interfacial nitrogen on the structural and electrical properties of ultra thin ZrO2 gate dielectrics on partially strain-compensated SiGe/Si heterolayers by Mahapatra.R, Maikap.S, Lee.J.Hun, Kar.S, Dhar.A Nong-M. Hwanng, Don-Y.Kim, Mathur.B.K, and Ray.S.K, Appl.Phys.Lett, 82 (2003) 4331-4333
    • Characteristics of ultra-thin HfO2 gate dielectrics on strained-Si 0.74 Ge 0.26 layers by Lee.Je.Hun, Maikap.S, Mahapatra.R, Noh.Y.S, Choi Won-Kook and Ray.S.K, Appl. Phys. Lett, 83 (2003) 779-781
    • THz lasing of SiGe/Si quantum-well structures due to shallow acceptors by Kagan.M.S, Altukhov.I.V, Chirkova.E.G, Sinis.V.P, Troeger.R.T, Ray.S.K, and Kolodzey.J, Phys. Stat. Sol.b, 235 (2003) 135- 138
    • THz lasing due to resonant acceptor states on strained p-Ge and SiGe quantum-well structures by Kagan.M.S, Altukhov.I.V, Chirkova.E.G, V. P. Sinis, Troeger.R.T, Ray.S.K, and Kolodzey.J, Phys. Stat. Solb, 235 (2003) 293-296
    • Electrical properties of plasma grown gate oxides On tensile strained Si1-yCy alloy by Mahapatra.R, Maikap.S, Kar.G.S and Ray.S.K, Electronics Lets, 38 (2002) 1000-1001
    • ZrO2 as a high-k dielectric for strained SiGe MOS devices by Mahapatra.R, Kar.G.S, Samantaray.B.K, Dhar.A, Bhattacharya.D, Ray.S.K, Bulletin Of Materials Science, 25 (2002) 455-457
    • Vibrational spectroscopic studies on Ba0.8Sr0.2TiO3 films prepared by RF sputtering techn by C. B. Samantaray, A. Roy, M. Roy, M.L.Mukherjee and S. K. Ray, J. Phys. & Chem. Of Solids, 63 (2002) 65-69
    • Effect of carbon on lattice strain and hole mobility of UHVCVD grown Si1-xGex by G. S. Kar, S. K. Ray, A. Dhar, L. K. Bera and S. K. Banerjee, layers J. Mat. Sc. In Electronics, 13 (2002) 49-55
    • Series resistance and mobility degradation factor in C-incorporated SiGe heterostructure p-type metal oxide-semiconductor by G. S.Kar, S. Maikap, S. K. Banerjee and S. K. Ray, Semicond. Sci & Technol., 17 (2002) 938-941
    • Hole velocity overshoot in partially strain compensated Si0.793Ge0.2C0.007 inversion laye by G S Kar, S Maikap, S K Ray and S K Banerjee, Electronics Letts., 38 (2002) 141-142
    • Effective mobility and alloy scattering in the strain compensated SiGeC inversion layer by G S Kar, S Maikap, S K Ray, S K Banerjee and N B Chakrabarti, Semicond. Sci & Technol., 17 (2002) 471-475
    • RF magnetron sputtered high-k barium strontium titanate thin films on magnetoresistive La0.7Ca0.3MnO by C.B.Samantaray, A.Dhar, D.Bhattacharya, M.L.Mukherjee and S. K. Ray, Mat. Sc. Engg., B88 (2002) 14-17
    • (Gd2) 3, Ga2O3(Gd2O3), Y2O3 and Ga2O3, as high-k gate dielectrics on SiGe: A comparative study by S. Pal, S.K.Ray, B.R.Chakraborty, S.K.Lahiri and D.N.Bose, J. Applied Phys., 90 (2001) 4103-4107
    • Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy heterolayers by S. K. Ray, S.Maikap, S.K.Samanta, S. K. Banerjee and C. K. Maiti, Solid St. Electronics, 45 (2001) 1951-1955
    • Characteristics of UHVCVD grown Si/Si1-x-yGexCy/Si/Si quantum well heterostructure by S. K. Ray, G.S.Kar and S.K. Banerjee, Appl. Surf. Sci., 182 (2001) 361-365
    • Bandgap engineering in vertical p-MOSFETs by X. Chen, K. C. Liu, S.K. Ray and S. Banerjee, Solid St. Electronics, vol, 45 (2001) 1939-1943